의공학-바이오소재(융합협동 프로그램)
이름
김호경
전공
응용광학 (광전소재 및 소자), 반도체물리
TEL
02-970-6233
E-mail
hogyoungkim@seoultech.ac.kr
연구실
무궁관 416호
교수소개 돌아가기
학력
- 서울대학교, 물리학과, 이학사, 1995
- 서울대학교, 물리학과, 이학석사, 1997
- Purdue University, 물리학과, 이학박사, 2007
주요 경력
- 대우전자 TMA 연구소 주임연구원 (1997.01~2002.07)
- LG전자기술원 소자재료연구소 책임연구원 (2007.03~2008.09)
- 한국나노기술원 전략과제팀 선임연구원 (2008.10~2008.12)
- 한밭대학교 기초과학부 전임강사/조교수 (2009.01~2013.02)
- 서울과학기술대학교 안경광학과 조교수/부교수/교수 (2013.03~현재)
- 서울과학기술대학교 안경광학과 학과장 (2018.09~2020.08)
연구 분야
- 광전소자 및 광원 특성 연구
- 광학재료 & 전기전자재료 개발 및 물성 연구
- 박막공정; 공정연구 및 박막 분석
- 에너지변환소자 연구
- 소자의 전류수송 특성 연구
담당 교과목
- 물리학 및 실험 (Physics & Experiment)
- 현대광학 (Modern Optics)
- 광전자공학 (Optoelectronics)
- 안광학기기학 (Ophthalmic & Optical Instruments)
저널 논문
Selected publications (SCI/(E))
- "ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions", H. Kim, M. Jung, S. Choi, and B. Choi, Materials Today Communications, 25, 101265 (2020).
- "Influence of AlN and GaN pulse ratios in thermal atomic layer deposited AlGaN on the electrical characteristics in AlGaN/GaN Schottky diodes, H. Kim, S. Choi, and B. Choi, Coatings, 10, 489 (2020).
- "Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition", H. Yun, H. Kim, and B. Choi, Ceramics International, 46, 13372 (2020).
- "AlN passivation effect on Au/GaN Schottky contacts", H. Kim, Y. Kwon and B. Choi, Thin Solid Films, 670, 41 (2019).
- "Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer", H. Kim, H. Yun and B. Choi, RSC Advances, 8, 42390 (2018).
- "Interfacial characteristics of Al2O3/InP metal-insulator-semiconductor diodes", H. Kim, Y. Kim and B. Choi, AIP Advances, 8, 095022 (2018).
- "Thickness dependence on interfacial and electrical properties in atomic layer deposited AlN on c-plane GaN ", H. Kim, H. Yoon, and B. Choi, Nanoscale Research Letters, 13, 232 (2018).
- "Post deposition annealing effect on the properties of Al2O3/InP interface", H. Kim, D. Kim and B. Choi, AIP Advances, 8, 025211 (2018).
- "Interfacial and electrical characteristics of Al2O3/GaN metal-oxide-semiconductor junctions with ultrathin AlN layer", H. Kim, D. Kim and B. Choi, Applied Physics A: Materials Science & Processing, 128, 800 (2017).
- "White light emission of monolithic InGaN/GaN grown on morphology–controlled, nanostructured GaN templates", K. Song, D. Kim, J. Kim, C. Cho, J. Choi, K. Kim, J. Park and H. Kim, Nanotechnology, 28, 225703 (2017).
- " Au/n-InP Schottky Diodes Using Al2O3 Interfacial layer grown by atomic layer deposition", H. Kim, M. Kim, S. Yoon and B. Choi, Semiconductor Science and Technology, 32, 025011 (2017).
- "Transfer printed flexible and stretchable thin film solar cells using a water-soluble sacrificial layer", J. Nam, Y. Lee, W. Choi, C. Kim, H. Kim, J. Kim, D. Kim and S. Jo, Advanced Energy Materials, 6, 1601269 (2016).
- "Te doping effect of InGaP in tunnel junction on the performance of InGaP/InGaAs/Ge triple junction solar cells", S. Jung, C. Kim, Y. Kim, D. Jun, H. Kim and H. Kang, IEEE Transactions on Electron Devices, 63, 1594 (2016).
- "A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K", H. Kim, C. Jung, S. Kim, Y. Cho and D. Kim, Current Applied Physics, 16, 37 (2016).
- "Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment", H. Kim, Y. Cho, S. Kim, C. Jung, and D. Kim, Semiconductor Science and Technology, 30, 125016 (2015).
- "Transfer Printed Microcell Array for Stretchable Organic Solar Cells", N. Kang, W. Choi, H. Kim, C. Kim and S. Jo, ECS Solid State Letters, 4, P88 (2015).
- "Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction", H. Kim, S. Kim, C. Jung, Y. Cho and D. Kim, Vacuum, 121, 125 (2015).
- "Copper Schottky contacts to oxygen plasma treated n-type Ge", C. Jung, S. Kim and H. Kim, Journal of the Korean Physical Society, 66, 1285 (2015).
- "Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells", S. Jung, C. Kim, D. Jun, W. Park, H. Kang, J. Lee and H. Kim, Current Applied Physics, 14, 1476 (2014).
- "A repeatable epitaxial lift-off process from single GaAs substrate for low-cost and high efficiency III-V solar cells", W. Choi, C. Kim, C. Kim, W. Heo, T. Joo, S. Ryu, H. Kim, H. Kim, H. Kang, and S. Jo, Advanced Energy Materials, 4, 1400589 (2014).
- "Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes", H. Kim, H. Kim and D. Kim, Vacuum, 101, 92 (2014).
- "Investigation of blue luminescence in Mg doped a-plane GaN", H. Kim and K. Song, Journal of Luminescence, 145, 631 (2014).
- "Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification", K. Song, D. Kang, C. Shin, H. Kim and J. Kim, Materials Letters, 93, 356 (2013).
- "Influence of initial growth pressure on the optical properties of Si-doped a-plane GaN grown with different doping levels", K. Song, J. Kim, C. Shin, C. Ko, H. Cho, D. Yoon, S. Hwang and H. Kim, Journal of Crystal Growth, 370, 22 (2013).
- "Influence of shunt conduction on determination of dominant recombination processes in CIGS thin film solar cells", Y. Cho, E. Lee, D. Kim, G. Jeong, J. Gwak, S. Ahn, J. Yun and H. Kim, Current Applied Physics, 13, 37 (2013).
- "Optical properties of undoped a-plane GaN grown with different initial growth pressures", K. Song and H. Kim, Japanese Journal of Applied Physics, 51, 092101 (2012).
- "Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth method", H. Kim, A. Sohn and D. Kim, Semiconductor Science and Technology, 27, 035010 (2012).
- "Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN", K Song, J. Kim, B. Kang, C. Shin, C. Ko, Bo. Kong, H. Cho, D. Yoon, H. Kim, and S. Hwang, Applied Surface Science, 258,3565 (2012).
- "Properties of Si doped a-plane GaN grown with different SiH4 flow rates", K. Song, C. Kim, J. Kim, D. Yoon, S. Hwang and H. Kim, Japanese Journal of Applied Physics, 50, 055502 (2011).
- "Te doping in GaAs tunnel junction for GaInP/GaAs tandem solar cells", H. Kang, S. Park, D. Jun, C. Kim, K. Song, W. Park, C. Go and H. Kim, Semiconductor Science and Technology, 26, 075009 (2011).
- "Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions", E. Lee, M. Kwon, D. Kim and H. Kim, Applied Physics Letters, 98, 132905 (2011).
- "Silver Schottky contacts to a-plane bulk ZnO", H. Kim, H. Kim and D. Kim, Journal of Applied Physics, 108, 074514 (2010).
- "Current transport in Pt Schottky contacts to a-plane n-type GaN", S. Phark, H. Kim, K. Song, P. Kang, H. Shin and D. Kim, Journal of Physics D: Applied Physics, 43, 165102 (2010).
- Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction”, C. Kim, H. Kim, K. Song, D. Jun, H. Kang, W. Park and C. Ko, Microelectronic Engineering, 87, 677 (2010).
- “The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells”, D. Jun, C. Kim, H. Kim, H. Shin, H. Kang, W. Park, K. Shin and C. Ko, Journal of Semiconductor Technology and Science, 9, 91 (2009).
- “Reactive ion etching damage in n-GaN and its recovery by post-etch treatment”, H. Kim, IEE Electronics Letters, 44, 1037 (2008).
- “Field emission from GaN and (Al,Ga)N/GaN nanorod heterostructures”, P. Deb, T. Westover, H. Kim, T. Fisher and T. Sands, Journal of Vacuum Science and Technology B 25, L15 (2007).
- "Nanopatterned contacts to GaN”, H. Kim, P. Deb and T. Sands, Journal of Electronic Materials, 36, 359 (2007).
- "GaN nanorod Schottky and p-n junction diodes”, P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger and T. Sands, Nano Letters, 6, 2893 (2006).
- "Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN”, H. Kim, S. Kim, P. Deb and T. Sands, Journal of Electronic Materials, 35, 107 (2006).
-"Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography”, P. Deb, H. Kim, V. Rawat, M. Oliver, S. Kim, M. Marshall, E. Stach and T. Sands, Nano Letters, 5, 1847 (2005).
특허
- (US Patent) "Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof", Patent No. US8597973 B2
- (Korea Patent) “Solar cell and method for manufacturing thereof”, Registration No. 10-1550915-0000, 2015/09/01.
- (Korea Patent) “Tandem structure CIGS solar cell and method for manufacturing the same”, Registration No. 10-1412150-0000, 2014/06/19.
- (Korea Patent) "Manufacturing method of solar cell thin film using nanoparticle ink and solar cell using the said method”, Registration No. 10-1349852-0000, 2014/01/03.
- (Korea Patent) “Tandem thin film solar cell and fabrication method thereof”, Registration No. 10-1372536-0000, 2014/03/04.
- (Korea Patent) “CIGS film solar cell and manufacturing method thereof”, Registration No. 10-1144807-0000, 2012/05/03.
연구프로젝트
- "얇은 박막을 이용한 광대역반도체 소자의 특성 변화 연구", 한국연구재단, 2017.6 ~
- "다층성장기술을 사용한 저가형 고효율 III-V계 태양전지 기술 개발", 한국에너지기술평가원, 2011.7. ~ 2013.6.
- "모바일 융합기기용 5W급 풀칼라(R,G,B) 레이저 다이오드 및 모듈 개발", 한국산업기술평가관리원, 2011.8-2014.2
- "금속/ZnO 계면의 전기적 특성 연구", 한국연구재단, 2010.5-2011.4
- "초고효율 III-V 화합물 반도체 태양전지 기술 개발", 한국산업기술평가원, 2008.10-2009.7
- "나노기술 기반의 차세대 산업화 핵심요소기술 개발", 한국산업기술평가원, 2008.08-2009.07
기타(학회활동 등)
- 한국물리학회 회원 및 평의원
- 한국재료학회 회원
- 한국광학회 회원
- 한국전기전자재료학회 회원 (2017년 운정 백용현 학술상 수상, 2020년 학회 학술상 수상)
담당자 : 의공학-바이오소재 융합협동과정
전화번호 : 02-970-6794
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