Name Kim, Ho Gyoung
Position professor
Tel +82-2-970-6233
Fax 02-971-2852
E-mail hogyoungkim@seoultech.ac.kr
Biography
Ph.D in Physics, Purdue University, West Lafayette, IN, USA (2002.08~2007.02)
M.S. in Physics, Seoul National University, Seoul, Korea (1995.03~1997.02)
B.S. in Physics, Seoul National University, Seoul, Korea (1991.03~1995.02)
Careers
2014.10~Present
Associate Professor, Department of Visual Optics, Seoul National University of Science & Technology (Seooultech), Seoul, Korea
2013.03~2014.09
Assistant Professor, Department of Visual Optics, Seoul National University of Science & Technology (Seooultech), Seoul, Korea
2009.01~2013.02
Assistant Professor, College of Humanities and Sciences, Hanbat National University, Daejeon, Korea
2008.10~2008.12
Senior Research Engineer, Strategic Project Team, Korea Advanced Nano Fab Center, Suwon, Korea
2007.03~2008.09
Chief Research Engineer, Devices and Materials Lab, LG Electronics Institute of Technology, Seoul, Korea
1997.01~2002.07
Research Engineer, TMA Research Center, Daewoo Electronics, Seoul, Korea
Research Areas
- Developing and Exploring Optoelectronic devices
- Extending research area to nano/bio optics
Teaching
- General physics & experiment
- Modern Optics
- Optoelectronics
- Ophthalmic & Optical Instruments
Journal Papers
Selected publications (SCI/SCIE)

- "ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions", H. Kim, M. Jung, S. Choi, and B. Choi, Materials Today Communications, 25, 101265 (2020).
- "Influence of AlN and GaN pulse ratios in thermal atomic layer deposited AlGaN on the electrical characteristics in AlGaN/GaN Schottky diodes, H. Kim, S. Choi, and B. Choi, Coatings, 10, 489 (2020).
- "Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition", H. Yun, H. Kim, and B. Choi, Ceramics International, 46, 13372 (2020).
- "AlN passivation effect on Au/GaN Schottky contacts", H. Kim, Y. Kwon and B. Choi, Thin Solid Films, 670, 41 (2019).
- "Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer", H. Kim, H. Yun and B. Choi, RSC Advances, 8, 42390 (2018).
- "Interfacial characteristics of Al2O3/InP metal-insulator-semiconductor diodes", H. Kim, Y. Kim and B. Choi, AIP Advances, 8, 095022 (2018).
- "Thickness dependence on interfacial and electrical properties in atomic layer deposited AlN on c-plane GaN ", H. Kim, H. Yoon, and B. Choi, Nanoscale Research Letters, 13, 232 (2018).
- "Post deposition annealing effect on the properties of Al2O3/InP interface", H. Kim, D. Kim and B. Choi, AIP Advances, 8, 025211 (2018).
- "Interfacial and electrical characteristics of Al2O3/GaN metal-oxide-semiconductor junctions with ultrathin AlN layer", H. Kim, D. Kim and B. Choi, Applied Physics A: Materials Science & Processing, 128, 800 (2017).
- "White light emission of monolithic InGaN/GaN grown on morphology–controlled, nanostructured GaN templates", K. Song, D. Kim, J. Kim, C. Cho, J. Choi, K. Kim, J. Park and H. Kim, Nanotechnology, 28, 225703 (2017).
- " Au/n-InP Schottky Diodes Using Al2O3 Interfacial layer grown by atomic layer deposition", H. Kim, M. Kim, S. Yoon and B. Choi, Semiconductor Science and Technology, 32, 025011 (2017).
- "Transfer printed flexible and stretchable thin film solar cells using a water-soluble sacrificial layer", J. Nam, Y. Lee, W. Choi, C. Kim, H. Kim, J. Kim, D. Kim and S. Jo, Advanced Energy Materials, 6, 1601269 (2016).
- "Te doping effect of InGaP in tunnel junction on the performance of InGaP/InGaAs/Ge triple junction solar cells", S. Jung, C. Kim, Y. Kim, D. Jun, H. Kim and H. Kang, IEEE Transactions on Electron Devices, 63, 1594 (2016).
- "A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K", H. Kim, C. Jung, S. Kim, Y. Cho and D. Kim, Current Applied Physics, 16, 37 (2016).
- "Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment", H. Kim, Y. Cho, S. Kim, C. Jung, and D. Kim, Semiconductor Science and Technology, 30, 125016 (2015).
- "Transfer Printed Microcell Array for Stretchable Organic Solar Cells", N. Kang, W. Choi, H. Kim, C. Kim and S. Jo, ECS Solid State Letters, 4, P88 (2015).
- "Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction", H. Kim, S. Kim, C. Jung, Y. Cho and D. Kim, Vacuum, 121, 125 (2015).
- "Copper Schottky contacts to oxygen plasma treated n-type Ge", C. Jung, S. Kim and H. Kim, Journal of the Korean Physical Society, 66, 1285 (2015).
- "Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells", S. Jung, C. Kim, D. Jun, W. Park, H. Kang, J. Lee and H. Kim, Current Applied Physics, 14, 1476 (2014).
- "A repeatable epitaxial lift-off process from single GaAs substrate for low-cost and high efficiency III-V solar cells", W. Choi, C. Kim, C. Kim, W. Heo, T. Joo, S. Ryu, H. Kim, H. Kim, H. Kang, and S. Jo, Advanced Energy Materials, 4, 1400589 (2014).
- "Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes", H. Kim, H. Kim and D. Kim, Vacuum, 101, 92 (2014).
- "Investigation of blue luminescence in Mg doped a-plane GaN", H. Kim and K. Song, Journal of Luminescence, 145, 631 (2014).
- "Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification", K. Song, D. Kang, C. Shin, H. Kim and J. Kim, Materials Letters, 93, 356 (2013).
- "Influence of initial growth pressure on the optical properties of Si-doped a-plane GaN grown with different doping levels", K. Song, J. Kim, C. Shin, C. Ko, H. Cho, D. Yoon, S. Hwang and H. Kim, Journal of Crystal Growth, 370, 22 (2013).
- "Influence of shunt conduction on determination of dominant recombination processes in CIGS thin film solar cells", Y. Cho, E. Lee, D. Kim, G. Jeong, J. Gwak, S. Ahn, J. Yun and H. Kim, Current Applied Physics, 13, 37 (2013).
- "Optical properties of undoped a-plane GaN grown with different initial growth pressures", K. Song and H. Kim, Japanese Journal of Applied Physics, 51, 092101 (2012).
- "Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth method", H. Kim, A. Sohn and D. Kim, Semiconductor Science and Technology, 27, 035010 (2012).
- "Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN", K Song, J. Kim, B. Kang, C. Shin, C. Ko, Bo. Kong, H. Cho, D. Yoon, H. Kim, and S. Hwang, Applied Surface Science, 258,3565 (2012).
- "Properties of Si doped a-plane GaN grown with different SiH4 flow rates", K. Song, C. Kim, J. Kim, D. Yoon, S. Hwang and H. Kim, Japanese Journal of Applied Physics, 50, 055502 (2011).
- "Te doping in GaAs tunnel junction for GaInP/GaAs tandem solar cells", H. Kang, S. Park, D. Jun, C. Kim, K. Song, W. Park, C. Go and H. Kim, Semiconductor Science and Technology, 26, 075009 (2011).
- "Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions", E. Lee, M. Kwon, D. Kim and H. Kim, Applied Physics Letters, 98, 132905 (2011).
- "Silver Schottky contacts to a-plane bulk ZnO", H. Kim, H. Kim and D. Kim, Journal of Applied Physics, 108, 074514 (2010).
- "Current transport in Pt Schottky contacts to a-plane n-type GaN", S. Phark, H. Kim, K. Song, P. Kang, H. Shin and D. Kim, Journal of Physics D: Applied Physics, 43, 165102 (2010).
- Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction”, C. Kim, H. Kim, K. Song, D. Jun, H. Kang, W. Park and C. Ko, Microelectronic Engineering, 87, 677 (2010).
- “Field emission from GaN and (Al,Ga)N/GaN nanorod heterostructures”, P. Deb, T. Westover, H. Kim, T. Fisher and T. Sands, Journal of Vacuum Science and Technology B 25, L15 (2007).
- "Nanopatterned contacts to GaN”, H. Kim, P. Deb and T. Sands, Journal of Electronic Materials, 36, 359 (2007).
- "GaN nanorod Schottky and p-n junction diodes”, P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger and T. Sands, Nano Letters, 6, 2893 (2006).
- "Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN”, H. Kim, S. Kim, P. Deb and T. Sands, Journal of Electronic Materials, 35, 107 (2006).
-"Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography”, P. Deb, H. Kim, V. Rawat, M. Oliver, S. Kim, M. Marshall, E. Stach and T. Sands, Nano Letters, 5, 1847 (2005).
Patents
- (US Patent) "Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof", Patent No. US8597973 B2
- (Korea Patent) “Solar cell and method for manufacturing thereof”, Registration No. 10-1550915-0000, 2015/09/01.
- (Korea Patent) “Tandem structure CIGS solar cell and method for manufacturing the same”, Registration No. 10-1412150-0000, 2014/06/19.
- (Korea Patent) "Manufacturing method of solar cell thin film using nanoparticle ink and solar cell using the said method”, Registration No. 10-1349852-0000, 2014/01/03.
- (Korea Patent) “Tandem thin film solar cell and fabrication method thereof”, Registration No. 10-1372536-0000, 2014/03/04.
- (Korea Patent) “CIGS film solar cell and manufacturing method thereof”, Registration No. 10-1144807-0000, 2012/05/03.