-2022.02 서울대학교 전기∙정보공학부 박사
-2015.02 서울대학교 전기∙정보공학부 학사

-2024.03~ 서울과학기술대학교 조교수
-2023.01~2024.02 조지아공과대학교 박사후연구원
-2022.03~2022.11 서울대학교 박사후연구원

- Tae-Hyeon Kim*, Omkar Phadke*, Yuan-Chun Luo*, Halid Mulaosmanovic, Johannes Mueller, Stefan Duenkel, Sven Beyer, Asif Islam Khan, Suman Datta, Shimeng Yu, "Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse", IEEE Electron Device Letters, 2023
- Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim, Woo Young Choi, "Fuse Devices for Pruning in Memristive Neural Network", IEEE Electron Device Letters, 2023
- Jongmin Park, Tae-Hyeon Kim#, Osung Kwon, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Sangbum Kim, Sungjun Kim#, "Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM", Nano Energy, 2022
- Jinwoo Park*, Tae-Hyeon Kim*, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim, "Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction", IEEE International Electron Devices Meeting (IEDM), 2022
- Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim, "Effect of Program Error in Memristive Neural Network with Weight Quantization", IEEE Transactions on Electron Devices, 2022
- Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system", Chaos, Solitons & Fractals, 2021
- Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park, Hyungjin Kim, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system", Nanotechnology, 2021
- Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, Hyungjin Kim, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array", Applied Physics Letters, 2020

- Jihyung Kim, Subaek Lee, Sungjoon Kim, Seyoung Yang, Jung‐Kyu Lee, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Woo Young Choi, Sungjun Kim, "Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array", Advanced Functional Materials, 2023
- Shimeng Yu, Yuan-Chun Luo, Tae-Hyeon Kim, Omkar Phadke, "Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory", IEEE Electron Devices Magazine, 2023
- Tae-Hyeon Kim*, Omkar Phadke*, Yuan-Chun Luo*, Halid Mulaosmanovic, Johannes Mueller, Stefan Duenkel, Sven Beyer, Asif Islam Khan, Suman Datta, Shimeng Yu, "Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse", IEEE Electron Device Letters, 2023
- Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho, "Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System", Advanced Materials Interfaces, 2023
- Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho, "Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems", Nanoscale, 2023
- Min Suk Song*, Tae-Hyeon Kim*, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim, "Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator", Advanced Intelligent Systems, 2023
- Geun Ho Lee*, Tae-Hyeon Kim*, Sangwook Youn, Jinwoo Park, Sungjoon Kim, Hyungjin Kim, "Low-Fluctuation Nonlinear Model Using Incremental Step Pulse Programming with Memristive Devices", Chaos, Solitons & Fractals, 2023
- Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, Hyungjin Kim, "Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine Tuning Operation", Advanced Intelligent Systems, 2023
- Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Byung-Gook Park, Woo Young Choi, "Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM", ACS Applied Electronic Materials, 2023
- Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim, Woo Young Choi, "Fuse Devices for Pruning in Memristive Neural Network", IEEE Electron Device Letters, 2023
- Jongmin Park, Tae-Hyeon Kim#, Osung Kwon, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Sangbum Kim, Sungjun Kim#, "Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM", Nano Energy, 2022
- Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim, and Byung-Gook Park, "Enhanced Current-Voltage Nonlinearity by Controlling Oxygen Concentration of TiOx Buffer Layer for RRAM Passive Crossbar Array", Journal of Semiconductor Technology and Science, 2022
- Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim, "4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array", Advanced Intelligent Systems, 2022
- Jinwoo Park, Min Suk Song, Sangwook Youn, Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim, "Intrinsic variation effect in memristive neural network with weight quantization", Nanotechnology, 2022
- Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim, "Effect of Program Error in Memristive Neural Network with Weight Quantization", IEEE Transactions on Electron Devices, 2022
- Geun Ho Lee*, Tae-Hyeon Kim*, Yeongjin Hwang, Sungjoon Kim, Jinwoo Park, Kyungho Hong, Byung-Gook Park, Hyungjin Kim, "Effect of Weight Overlap Region of Memristive Synaptic Devices on Neuromorphic System", Chaos, Solitons & Fractals, 2022
- Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach", Physical Chemistry Chemical Physics, 2021
- Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system", Chaos, Solitons & Fractals, 2021
- Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, Byung-Gook Park, "A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications", Nanotechnology, 2021
- Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Geun Ho Lee, Hussein Nili, Hyungjin Kim, "Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors", Chaos, Solitons & Fractals, 2021
- Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Md Hasan Raza Ansari, Seongjae Cho, Byung-Gook Park, "A more hardware-oriented spiking neural network based on leading memory technology and its application with reinforcement learning", IEEE Transactions on Electron Devices, 2021
- Dayoung Kim*, Tae-Hyeon Kim*, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin, "Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array", IEEE Access, 2021
- Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park, Hyungjin Kim, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system", Nanotechnology, 2021
- Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Sungjun Kim, Byung-Gook Park, "Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiN x/TiN conductive bridging random access memory observed at sub-µA current", Semiconductor Science and Technology, 2021
- Sihyun Kim, Ryoongbin Lee, Daewoong Kwon, Tae-Hyeon Kim, Tae Jung Park, Sung-Jin Choi, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents", IEEE Sensors Journal, 2021
- Tae-Hyeon Kim, Sungjun Kim, Byung-Gook Park, "Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM", Microelectronic Engineering, 2021
- Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park, "Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation", IEEE Transactions on Electron Devices, 2021
- Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation", IEEE Access, 2020
- Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim, Byung-Gook Park, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM", Applied Physics Letters, 2020
- Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, Hyungjin Kim, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array", Applied Physics Letters, 2020
- Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Multilevel switching characteristics of Si3N4-based nano-wedge resistive switching memory and array simulation for in-memory computing application", Electronics, 2020
- Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim, "Zinc tin oxide synaptic device for neuromorphic engineering", IEEE Access, 2020
- Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Fabrication and Characterization of TiOx Memristor for Synaptic Device Application", IEEE Transactions on Nanotechnology, 2020
- Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application", Semiconductor Science and Technology, 2020
- Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM", IEEE Transactions on Electron Devices, 2020
- Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, Byung-Gook Park, "SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory", Applied Physics Letters, 2019
- Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation", Solid-State Electronics, 2019
- Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application", Solid-State Electronics, 2018
- Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park, "Dual Functions of V/SiO x/AlO y/p++ Si Device as Selector and Memory", Nanoscale research letters, 2018
- Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park, "Concurrent events of memory and threshold switching in Ag/SiNx/Si devices", Journal of Vacuum Science & Technology B, 2018
- Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae-Hyeon Kim, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement", Current Applied Physics, 2018
- Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Byung-Gook Park, "Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current", IEEE Transactions on Nanotechnology, 2018
- Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park, "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device", Solid-State Electronics, 2018
- Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park, "Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes", Journal of Nanoscience and Nanotechnology, 2017
- Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park, "Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device", Physical Chemistry Chemical Physics, 2017
- Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park, "Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory", Solid-State Electronics, 2017
- Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, Byung-Gook Park, "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory", Materials, 2017
- Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park, "Nano-cone resistive memory for ultralow power operation", Nanotechnology, 2017
- Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, Byung-Gook Park, "Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure", Journal of Alloys and Compounds, 2016

- Jinwoo Park*, Tae-Hyeon Kim*, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim, "Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction", IEEE International Electron Devices Meeting (IEDM), 2022
- Tae-Hyeon Kim, Byung-Gook Park, "TiOx 기반 저항 변화 메모리의 상부 전극에 따른 정류 특성 연구", IEIE Summer Conference, 2019
- Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Byung-Gook Park, "Effects of pulse amplitude on conductance change of TiOx-based synaptic devices", Korean Conference on Semiconductors, 2019
- Tae-Hyeon Kim, Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Byung-Gook Park, "Fabrication of Nano-cone RRAM and Analysis of its Electrical Concentration Effect", ChinaRRAM International Workshop, 2017
- Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su-Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Resistive switching characteristics of a Ni/WOx/p+-Si RRAM by pulse analysis", Korean Conference on Semiconductors, 2017
- Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su-Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Reset Current Reduction for RRAM with Si Bottom Electrode", 2017 International Conference on Electronics, Information, and Communication, 2017
- Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Effect of Si bottom electrode on resistive switching characteristics for Sicompatible 3D vertical memory", The 20th International Vacuum Congress, 2017
- 김태현, 김성준, 김민휘, 방수현, 이동근, 박병국, "저전력 동작을 위한 실리콘 나이트라이드 기반의 저항 변화 메모리 소자에서 forming 전압이 미치는 효과", IEIE Summer Conference, 2016
- Tae-Hyeon Kim, Hyungjin Kim, Sungjun Kim, Su-Hyun Bang, Byung-Gook Park, "Resistive Switching Characteristics of RRAM with WOx Switching Layer Prepared by Rapid Thermal Oxidation", Korean Conference on Semiconductors, 2016
- 김태현, 김민휘, 정성헌, 김성준, 박병국, "시뮬레이션을 통한 RRAM crossbar array의 구현과 read margin 및 전력 소모 개선 방안 연구", IEIE Summer Conference, 2015

- Byung-Gook Park, Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Sang-Ho Lee, "Resistive random access memory device for 3D stack and memory array using the same and fabrication method thereof," US, 10741760, 2020
- Byung-Gook Park, Tae-Hyeon Kim, "Weight transfer apparatus for neuromorphic devices and weight transfer method using the same," US, 2022 (application filed)
- 박병국, 김태현, "뉴로모픽 소자를 위한 가중치 전사 장치 및 이를 이용한 가중치 전사 방법," 대한민국, 1025146520000, 2023

- Ferroelectric device fabrication and BEOL integration on top of CMOS, Georgia Institute of Technology, 2023~2024
- Improvement of memristor-based AI hardware performance with fault-aware retraining, Seoul National University, 2022
- Novel nano-structured resistive memory for neuromorphic systems, Seoul National University, 2015~2021